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(R)
LCP1511D
PROGRAMMABLE TRANSIENT VOLTAGE SUPPRESSOR FOR SLIC PROTECTION
Application Specific Discretes A.S.D.TM
FEATURES
DUAL PROGRAMMABLE TRANSIENT SUPPRESSOR. WIDE NEGATIVE FIRING VOLTAGE RANGE : VMGL = -80V max. LOW DYNAMIC SWITCHING VOLTAGES : VFP and VDGL. LOW GATE TRIGGERING CURRENT : IGT = 5mA max. PEAK PULSE CURRENT : IPP = 30A for 10/1000s surge. HOLDING CURRENT : IH = 150mA. DESCRIPTION This device has been especially designed to protect subscriber line card interfaces (SLIC) against transient overvoltages. Positive overloads are clipped with 2 diodes. Negative surges are suppressed by 2 thyristors, their breakdown voltage being referenced to -VBAT through the gate. This component presents a very low gate triggering current (IGT) in order to reduce the current consumption on printed circuit board during the firing phase. A particular attention has beengiven to the internal wire bonding. The "4-point" configuration ensures reliable protection, eliminating the overvoltage introduced by the parasitic inductances of the wiring (Ldi/dt), especially for very fast transients. COMPLIESWITHTHE FOLLOWINGSTANDARDS : CCITT K20 : VDE 0433 : VDE 0878 : I3124 : FCC part 68 : 10/700s 5/310s 10/700s 5/310s 1.2/50s 1/20s 0.5/700s 0.2/310s 2/10s 2/10s 1kV 25A 2kV 38A (*) 1.5kV 40A 1kV 25A 2.5kV 170A (*) 2.5kV 170A (*)
SO8
SCHEMATIC DIAGRAM
TIP 1 GATE 2 NC 3 RING 4
8 TIP 7 GND 6 GND 5 RING
BELLCORE TR-NWT-001089 : 2/10s 2/10s (*) with series resistors or PTC.
February 1998 Ed: 3
TM: ASD is trademarks of SGS-THOMSON Microelectronics.
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LCP1511D
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 C) Symbol IPP Peak pulse current (see note 1) Non repetitive surge peak on-state current (F = 50Hz) Maximum gate current (half sine wave tp = 10ms) Maximum voltage LINE / GROUND Maximum voltage GATE / LINE Storage temperature range Maximum junction temperature Maximum lead temperature for soldering during 10s Parameter 10/1000s 5/310s 2/10s tp = 10ms t = 1s Value 30 38 170 8 3.5 2 -100 -80 - 55 to + 150 150 260 Unit A
ITSM IGSM VMLG VMGL Tstg Tj TL
A A V C C
Note 1 : Pulse waveform : 10/1000s tr=10s 5/310s tr=5s 2/10s tr=2s
tp=1000s tp=310s tp=10s
% I PP 100
50
0 tr tp
t
THERMAL RESISTANCE Symbol Rth (j-a) Junction to ambient Parameter Value 170 Unit C/W
ELECTRICAL CHARACTERISTICS (Tamb = 25C) Symbol IGT IH IRM IRG VRM VF VGT VFP VDGL VGATE VLG C
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Parameter Gate triggering current Holding current Reverse leakage current LINE/GND Reverse leakage current GATE/LINE Reverse voltage LINE/GND Forward drop voltage LINE/GND Gate triggering voltage Peak forward voltage LINE/GND Dynamic switching voltage GATE/LINE GATE/GND voltage LINE/GND voltage Off-state capacitance LINE/GND
V V GATE RM
IF
I
VLG
IRM IH V F
IPP
LCP1511D
1 - PARAMETERS RELATED TO THE DIODE LINE/GND (Tamb = 25 C) Symbol VF VFP IF=5A 10/700s 1.2/50s 2/10s 1.5kV 1.5kV 2.5kV Test conditions tp=500s Rp=10 Rp=10 Rp=62 (see note 1) Maximum 3 5 7 12 Unit V V
Note 1 : See test circuit 2 for VFP; Rp is the protection resistor located on the line card.
2 - PARAMETERS RELATED TO THE PROTECTION THYRISTOR (Tamb = 25C) Symbol IGT IH VGT IRG VDGL VGND/LINE = -48V VGATE =-48V (see note 2) at IGT Tc=25C Tc=70C VRG =-75V VRG =-75V IPP=30A IPP=30A IPP=38A Test conditions Min. 0.2 150 2.5 5 50 10 20 25 Max. 5 Unit mA mA V A
VGATE= -48V (see note 3) 10/700s 1.5kV Rp=10 1.2/50s 1.5kV Rp=10 2/10s 2.5kV Rp=62
V
Note 2 : Note 3 :
See the functional holding current (I H) test circuit 2. See test circuit 1 for VDGL. The oscillations with a time duration lower than 50ns are not taken into account.
3 - PARAMETERS RELATED TO DIODE AND PROTECTION THYRISTOR (Tamb = 25 C) Symbol IRM C Tc=25C Tc=70C VR =-3V VR =-48V Test conditions VGATE/LINE = -1V VGATE/LINE = -1V F=1MHz F=1MHz VRM =-75V VRM =-75V Maximum 5 50 100 50 Unit A pF
APPLICATION NOTE
TIP 1 IN OUT 8 TIP
GATE 2
7 GND
In order to take advantageof the "4 point" structure of the LCP, the TIP and RING lines go across the device. In such case, the device will eliminate the overvoltages generated by the parasitic inductances of the wiring (Ldi/dt), especially for very fast transients.
NC 3
6
RING 4
IN
OUT
5
RING
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LCP1511D
FUNCTIONAL HOLDING CURRENT (IH) TEST CIRCUIT 1 : GO-NO GO TEST
R
P
D .T .U . VBA = T - 48V
Surge generator
This is a GO-NO GO test which allows to confirm the holding current (IH) level in a functional test circuit. TEST PROCEDURE : - Adjust the current level at the IH value by short circuiting the D.U.T. - Fire the D.U.T. with a surge current : IPP = 10A, 10/1000s. - The D.U.T. will come back to the off-state within a duration of 50ms max.
TEST CIRCUIT 2 FOR VFP AND VDGL PARAMETERS
(V is defined in unload condition)
P
R4 TIP R2 RING R3
L
VP
C1
R1
C2
G ND
Pulse (s) tr 10 1.2 2 tp 700 50 10
Vp (V) 1500 1500 2500
C1 (F) 20 1 10
C2 (nF) 200 33 0
L (H) 0 0 1.1
R1 () 50 76 1.3
R2 () 15 13 0
R3 () 25 25 3
R4 () 25 25 3
IPP (A) 30 30 38
Rp () 10 10 62
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LCP1511D
FUNCTIONAL DESCRIPTION LINE A PROTECTION : - For positive surges versus GND, the diode D1 will conduct. - For negative surges versus GND, the protection device P1 will trigger at a voltage fixed by the -VBAT reference. LINE B PROTECTION : - For surges on line B, the operating mode is the same, D2 or P2 is activated. It is recommended to add a capacitor (C=220nF) close to the gate of the LCP, in order to speed up the triggering.
LINE A D1 P1
TIP
- VBAT P2 D2 LINE B RING C
Surge peak current versus overload duration.
ITSM(A)
10 9 8 7 6 5 4 3 2 1 0 1E-2 1E-1 1E+0
F=50H z Tj initial=25C
t(s)
1E+1 1E+2 1E+3
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LCP1511D
APPLICATION CIRCUIT : typical SLIC protection concept
RING GENERATOR
- VBAT
PTC
LINE A T E S T R E L A Y S LINE B RING RELAY
220 nF
SLIC
THBTxxxD PTC LCP1511D
ORDER CODE
LCP 15
LINE CARD PROTECTION IH =150 mA
1
1
D
RL
RL : tape and reel : tube DYNAMIC
PACKAGE 1 : SO8
VERSION
MARKING Package SO8 Type LCP1511D Marking CP151D
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LCP1511D
PACKAGE MECHANICAL DATA SO8 Plastic DIMENSIONS REF. A a1 a2 b b1 C c1 D E e e3 F L M S 3.8 0.4 4.8 5.8 1.27 3.81 4.0 0.15 1.27 0.016 0.6 8 (max) 0.1 0.35 0.19 0.50 45(typ) 5.0 0.189 6.2 0.228 0.050 0.150 0.157 0.050 0.024 Millimetres Min. Typ. Max. Min. 1.75 0.25 0.004 1.65 0.48 0.014 0.25 0.007 0.020 0.197 0.244 Inches Typ. Max. 0.069 0.010 0.065 0.019 0.010
Weight = 0.08 g. Packaging: Product supplied in antistatictubes or tape and reel .
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
(c) 1998 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy- Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 7/7

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